preliminary datasheet high voltage power schottky rectifier mbr5h150 aug. 2009 rev. 1. 0 bcd semiconductor manufacturing limited 1 general description high voltage schottky rectifier suited for switch mode power supplies and other power converters. this device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. the mbr5h150 is available in standard do-27 and do-27(a) packages. features ? high surge capacity ? low forward voltage drop ? 175 c operating junction temperature ? guard-ring for stress protection ? pb-free and halogen-free packages are available ? the plastic material carries ul recongnition 94v-0 main product characteristics i f(av) 5a v rrm 150v t j 175 c v f(max) 0.92v mechanical characteristics ? case: jedec do-201ad molded plastic ? epoxy meets ul 94 v-0@ 0.125 in ? weight (approximately): 1.2 grams ? finish: all extern al surfaces corrosion resistant and terminal applications ? power supply ? output rectification ? power management ? instrumentation figure 1. package type of mbr5h150 do-27 do-27(a)
preliminary datasheet high voltage power schottky rectifier mbr5h150 aug. 2009 rev. 1. 0 bcd semiconductor manufacturing limited 2 pin configuration vp pacakge vpa package (do-27) (do-27(a)) figure 2. pin configuration of mbr5h150 (top view) ordering information mbr5h150 - circuit type e1: lead free g1: green package vp: do-27 blank: tube vpa: do-27(a) tr: ammo part number marking id package lead free green lead free green packing type mbr5h150vp-e1 mbr5h150vp-g1 515vp 515vpg bulk do-27 mbr5h150vptr-e1 mbr5h150vptr-g1 515vp 515vpg ammo do-27(a) mbr5h150vpa-e1 MBR5H150VPA-G1 515vp 515vpg bulk bcd semiconductor's pb-free products, as designated with "e1" suffix in the part number, are rohs compliant. products with ?g1? suffix are available in green packages.
preliminary datasheet high voltage power schottky rectifier mbr5h150 aug. 2009 rev. 1. 0 bcd semiconductor manufacturing limited 3 absolute maximum ratings ( per diode leg) (note 1) note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. note 2: the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/ ja . recommended operating conditions parameter symbol condition value unit jc junction to case tbd maximum thermal resistance ja junction to ambient tbd c/w electrical characteristics parameter symbol conditions value units maximum instantaneous forward voltage drop (note 3) v f i f =5a, t c =25 c 0.92 v rated dc voltage, t c =25 c 8.0 a maximum instantaneous reverse current (note 3) i r rated dc voltage, t c =150 c 50.0 ma note 3: pulse test: pulse width = 300 s, duty cycle ? 2.0%. parameter symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 150 v average rectified forward current (rated v r ) t c = 150 c i f(av) 5 a non repetitive peak surge current (surge applied at rated load conditions half wave, single phase, 60hz) i fsm 125 a operating junction temperature range note 2 t j 175 c storage temperature range t stg -55 to 175 c voltage rate of change (rated v r ) dv/dt 10000 v/ s esd ratings: machine model = c human body model =3b > 400 > 8000 v
preliminary datasheet high voltage power schottky rectifier mbr5h150 aug. 2009 rev. 1. 0 bcd semiconductor manufacturing limited 4 typical performance characteristics 0.01 0.1 1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v f ,instantaneous forward voltage(v) i f ,instantaneous forward current(a) 25 0 c 125 0 c 150 0 c 175 0 c figure 3. typical forward characteristics 0 20406080100120140160 10000 1000 100 10 1 0.1 i r ,reverse current( a) v r ,reverse voltage(v) 25 0 c 125 0 c 150 0 c 175 0 c 0.001 0.01 figure 4. typical reverse characteristics
preliminary datasheet high voltage power schottky rectifier mbr5h150 aug. 2009 rev. 1. 0 bcd semiconductor manufacturing limited 5 mechanical dimensions do-27 unit: mm(inch) 25.400(1.000) min 25.400(1.000) min 1.300(0.051) 1.200(0.047) 8.500(0.375) 9.500(0.335) 5.000(0.197) 5.600(0.220) dia. dia.
preliminary datasheet high voltage power schottky rectifier mbr5h150 aug. 2009 rev. 1. 0 bcd semiconductor manufacturing limited 6 mechanical dimensions (continued) do-27(a) unit: mm(inch) 8.500(0.375) 9.500(0.335) 19.500(0.768 20.500(0.807) 3.500(0.138) 4.500(0.0.177) 15.100(0.594) 16.100(0.634) 1.800(0.074) min. 1.500(0.059) max. 5.000(0.197) 5.600(0.220) dia. 1.300(0.051) dia. 1.200(0.047)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen, 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited
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